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| Transys Electronics LIMITED TO-220 Plastic-Encapsulated Transistors TIP31/31A/31B/31C FEATURES Power dissipation PCM: 2 W (Tamb=25) 2. COLLECTOR 3. EMITTER TRANSISTOR (NPN) TO-220 1. BASE Collector current ICM: 3 A Collector-base voltage V(BR)CBO: TIP31: 40 V TIP31A: 60 V TIP31B: 80 V TIP31C: 100 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter 31 Collector-base breakdown voltage 31A 31B 31C 31 Collector-emitter breakdown voltage 31A 31B 31C Emitter-base breakdown voltage 31 31A 31B 31C 31/31A 31B/31C V(BR)EBO V(BR)CEO V(BR)CBO 123 unless otherwise specified) Test conditions MIN 40 Ic= 100 A, IE=0 60 80 100 40 Ic= 30 mA, IB=0 60 80 100 IE= 100A, IC=0 VCB= 40V, IE=0 VCB= 60V, IE=0 VCB= 80V, IE=0 VCB= 100V, IE=0 5 V V V MAX UNIT Symbol Collector cut-off current ICBO 0.2 mA Collector cut-off curremt ICEO VCE= 30V , IB= 0 VCE= 60V , IB= 0 0.3 0.3 1 10 25 1.2 1.8 3 50 mA Emitter cut-off current IEBO hFE(1) VEB=5V, IC=0 VCE= 4V, IC= 3A VCE= 4V, IC= 1A IC=3A, IB=375mA VCE= 4V, IC=3A VCE=10V , IC=500mA mA DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage VCE(sat) VBE(on) fT V V MHZ Transition frequency |
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